Semiconductor laser
文献类型：专利
| 作者 | UEKI ATSUSHI; SHIKADA MINORU |
| 发表日期 | 1984-06-27 |
| 专利号 | JP1984111383A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the titled semiconductor laser with sufficiently minor fluctuation of water lengths at the time of modulation of the semiconductor laser according to an applied current by a method wherein the resonator of the laser is composed of a refractive index correcting element provided with the end surface thereof on the one side opposing to the incident beam- outgoing end surface on the one side of a semiconductor laser element, the end surface on the other side of this semiconductor laser and the end surface on the other side of the refractive index correcting element. CONSTITUTION:A photo semiconductor pellet 1 and a refrative index correcting element 10 are arranged facing each other with a second end surface 8 and a third end surface 14 which are neiboring each other, an active layer 4 and a guidewave path layer 34 positioned to each other so as to be coupled optically are fixed on a fixed stand 18, and a laser resonator 19 is composed of a first end surface 7 and a fourth end surface 16. To the photosemiconductor pellet 1 is applied a first signal current 38 at the base band zone from a first driver 20 for modulating the strength of laser output 22. On the other hand, to the refractive index correcting element 10 is applied a second signal current 39 having a relation to complement each other with the first signal current 38 at the modulation degree through a second driver 24. According to such a method, the optical length between the laser resonators is kept at a constant value, because the variation of the refractive index of the active layer 4 can be negated with the refractive index variation of the waveguide path layer 34. |
| 公开日期 | 1984-06-27 |
| 申请日期 | 1982-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79109]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | UEKI ATSUSHI,SHIKADA MINORU. Semiconductor laser. JP1984111383A. 1984-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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