Manufacture of semiconductor device
文献类型：专利
| 作者 | FURUIKE SUSUMU; ISHIGURO NAGATAKA; YAMANAKA HARUYOSHI |
| 发表日期 | 1984-04-04 |
| 专利号 | JP1984058822A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To obtain a flat and uniform compound epitaxial layer containing Al continuously on a substrate by a method wherein a chemical compound layer containing no Al is formed on a compound substrate containing Al and removed by a prescribed solvent and a solution containing the compound as a part of solutes is applied. CONSTITUTION:A P type GaAs substrate 6 is touched by Al+polycrystalline GaAs+Ga solution and polycrystalline GaAs+Ga solution of prescribed composition and a Ga1-xAlxAs layer 7 and a GaAs layer 8 are formed. Then the substrate is brought into contact with Al+polycrystalline GaAs+Ga of a prescribed composition at the prescribed temperature and if the rate of solution is selected not to be saturated at that temperature, the insufficient solute is supplied from the GaAs layer 8 and the layer 8 is removed. After being cooled down, a Ga1-xAlxAs layer 9 is formed. Oxidation of Al on the compound substrate is prevented by the layer 8 so that a flat and uniform epitaxial growth layer is obtained. |
| 公开日期 | 1984-04-04 |
| 申请日期 | 1982-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79116]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | FURUIKE SUSUMU,ISHIGURO NAGATAKA,YAMANAKA HARUYOSHI. Manufacture of semiconductor device. JP1984058822A. 1984-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。