Semiconductor light emitting device
文献类型：专利
| 作者 | OGITA SHOICHI |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238181A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To alleviate an electric field concentration near a 1/4 wavelength shifter and to uniformize an optical intensity distribution over a whole resonator by disposing diffraction gratings only at both ends in a 1/4 wavelength shift DFB laser, and equalizing it at the center to that of a normal Fabry-Perot laser. CONSTITUTION:A diffraction grating 4 is not formed on a whole waveguide layer 3, but gratings 4, 4' are formed only at both ends near the end face 7, and the grating is not provided at the central region. Accordingly, the central region is formed in a uniform part 8 having uniform thickness of the layer 3 similarly to that of a conventional Fabry-Perot laser. However, to form a 1/4 wavelength shift type, the space phases of the grating 4 at the connector of the part 8 to the two gratings 4, 4' are displaced by 1/4 wavelength. That is, the gratings are isolated in the 1/4 wavelength shifter, and the connector to the part 8 provided between the gratings 4 and 4' is formed as 1/4 wavelength shifters 9, 9'. With this configuration, the optical intensity distribution does not have a peak at the center, but is largely uniformized in comparison. Accordingly, even if the resonator length L is increased, a stable laser operation is maintained, thereby realizing a narrow beam width laser. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI. Semiconductor light emitting device. JP1989238181A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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