Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1991-09-19 |
| 专利号 | JP1991214785A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make it possible to obtain a semiconductor laser having a low threshold current value by satisfying simultaneously an increase in a gain generation efficiency and a mirror loss by a method wherein the thickness of an active region is made thick in the vicinities of mirror end surfaces and is made thin on a mirror surface other than the vicinities of the end surfaces. CONSTITUTION:A semiconductor laser is made to have a structure, in which the film thickness of an active region 12 is thick in the vicinities of mirror end surfaces 22 and is thin on a mirror surface other than the vicinities of the mirror end surfaces 22. That is, a plurality of grooves 21 having a trapezoidal section are provided in a crystal substrate 10 in parallel to each other and a layer structure, in which the active region is made thick at the trapezoidal groove parts, is formed utilizing the fact that a crystal growth rate in a vapor growth is large on an inclined crystal face in a specific orientation. For example, when a normal inverse mesa stripe formation direction is selected an a crystal orientation, in which an active region stripe is formed, and striped grooves 21 of a trapezoidal section are formed perpendicularly to the stripe formation direction, an inclined crystal of a trapezoidal section can be selected on a face having a large crystal growth rate in a vapor growth. Thereby, the semiconductor laser, whose oscillation threshold current value is low, accordingly whose power consumption and heat generation are low and which is stable, has characteristics capable of performing a high-speed drive and is suitable for a light source for optical communication and optical information processing use, is obtained. |
| 公开日期 | 1991-09-19 |
| 申请日期 | 1990-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Semiconductor laser and manufacture thereof. JP1991214785A. 1991-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。