Optical semiconductor device
文献类型：专利
| 作者 | KUMAI TSUGIO |
| 发表日期 | 1986-11-22 |
| 专利号 | JP1986264775A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To obtain an optical semiconductor device having a high integrity, by using a clad layer in a semiconductor laser also as a collector layer of a bipolar transistor and using a cap layer also as an emitter layer. CONSTITUTION:A p-type GaAlAs clad layer 2 and an active layer 3, an n-type GaAlAs clad layer 4, a GaAs base layer 5 and a p-type GaAs current blocking and light trapping layer 6 are grown on a substrate 1 sequentially in that order. A groove is formed by photo lithography in the region where a current constricting part of a semiconductor laser is to be formed such that the groove extends from the surface of the light trapping layer 6 up to the base layer 5. An n-type GaAs cap and emitter layer 7 is formed by the LPE or vapor-phase epitaxial growth. An isolating groove 11 is then formed by the photo lithography, and an opening or groove extending from the surface to the base layer 5 is formed. An n-side and emitter electrode 8, a base electrode 9 and a p-side and collector electrode 10 are provided by means of the vapor deposition and the photo lithography. |
| 公开日期 | 1986-11-22 |
| 申请日期 | 1985-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUMAI TSUGIO. Optical semiconductor device. JP1986264775A. 1986-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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