Optical semiconductor device
文献类型：专利
| 作者 | OOBE ISAO; TODOROKI SATORU |
| 发表日期 | 1985-10-31 |
| 专利号 | JP1985217684A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To increase an optical output, and to reduce electrical and thermal stress by combining optical waveguide layers in each multilayer body, filling sections among several multilayer body with a semi-insulating substance having a refractive index smaller than a semiconductor active layer or a P-N junction consisting of a P type semiconductor and an N type semiconductor and forming high reflectivity films to end surfaces. CONSTITUTION:An N type GaxAl1-xAs semiconductor clad layer 2, an N type GayAl1-yAs semiconductor optical waveguide layer 3, an intrinsic or P type Ga2Al1-2As semiconductor active layer 4, a P type GauAl1-uAs semiconductor clad layer 5 and a P type GavAl1-vAs semiconductor cap layer 6 are grown continuously on an N type GaAs semiconductor substrate 1 in an epitaxial manner, thus forming multilayer bodies. Two pairs of grooves and the removing sections of both side surfaces are buried with semi-insulating GaAs semiconductor buried layers 8 until the layers 7 reach to one parts of the layer 6, the grooves are filled with P type GavAl1-vAs semiconductor cap layers 8, and each multilayer body region 12, 13, 14 is formed through a division. Zinc is diffused to the surfaces of the layers 8 to shape P diffusion layers 10, Au group electrodes 11 are formed on the surface and the back, and high reflectivity films 15 are shaped on end surfaces except an extracting port for beams. Generated beams are mixed, and extracted to the outside from the optical waveguide layer 3 at one end surface of the region 13. |
| 公开日期 | 1985-10-31 |
| 申请日期 | 1984-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79138]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOBE ISAO,TODOROKI SATORU. Optical semiconductor device. JP1985217684A. 1985-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。