Semiconductor laser apparatus
文献类型：专利
| 作者 | NAITO HIROKI; HAMADA TAKESHI; SHIMIZU YUICHI |
| 发表日期 | 1989-12-06 |
| 专利号 | JP1989302886A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser apparatus |
| 英文摘要 | PURPOSE:To obtain an apparatus which can easily generate a pulsation in an internal stripe laser by a method wherein the internal stripe laser on a p-GaAs substrate is constituted in such a way that an n-GaAlAs layer whose mixed crystal ratio is higher than an AlAs mixed crystal ratio of an active layer is formed on an n-GaAs current-blocking layer. CONSTITUTION:A GaAs layer 2 of an opposite conductivity type and a GaAlAs layer 3 of the opposite conductivity type are formed one after another on a GaAs substrate 1 of one conductivity type; a groove 10 with a depth reaching the substrate 1 from the surface of the GaAlAs layer 3 is formed, a first clad layer 4, an active layer 5 composed of GaAlAs and a second clad layer 6 are formed one after another so as to fill the groove 10 on the GaAlAs layer 3. A mixed crystal ratio of the GaAlAs layer 3 is made larger than the mixed crystal ratio of the active layer 5. For example, an n-GaAs layer and an n-Ga0.8 Al0.2As layer 3 are formed on a p-GaAs substrate 1 by a liquid growth method; a groove 10 is formed. After that; a p-Ga0.55Al0.45As layer 4, a Ga0.85Al0.15As active layer 5, an n-Ga0.55Al0.45As layer 6 and n-GaAs layer 7 are formed again by using the liquid growth method. |
| 公开日期 | 1989-12-06 |
| 申请日期 | 1988-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79140]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,HAMADA TAKESHI,SHIMIZU YUICHI. Semiconductor laser apparatus. JP1989302886A. 1989-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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