Manufacture of semiconductor device
文献类型：专利
| 作者 | OKU SATORU; IKEDA MASAHIRO; KATO HARUSHIGE; SHIBATA YASUO |
| 发表日期 | 1992-02-24 |
| 专利号 | JP1992056122A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prepare an open section having the same size as a ridge width with a sufficient allowance in a semiconductor device by preparing a resist removing section in a ridge top area, followed by applying heat treatment to the resist removing section to deform the resist so as to expose the whole area of the ridge top. CONSTITUTION:On an InP substrate 1 of double hetrostructure having pn junction, a ridge is prepared, followed by forming the first film made of SiO2. The substrate is coated with photoresist and the photoresist in the ridge top area is removed therefrom. The substrate is kept in a furnace at 200 deg.C for 2 hours to expose the SiO2 film on the ridge top area with the width of opening equal to the ridge width. On the exposed SiO2 film an ohmic contact layer and an electrode layer are successively prepared thereon to prepare a semiconductor laser. |
| 公开日期 | 1992-02-24 |
| 申请日期 | 1990-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79142]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OKU SATORU,IKEDA MASAHIRO,KATO HARUSHIGE,et al. Manufacture of semiconductor device. JP1992056122A. 1992-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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