半導体レーザ
文献类型：专利
| 作者 | 佐々木 達也; 山崎 裕幸; 水戸 郁夫; 鈴木 徹 |
| 发表日期 | 1997-06-13 |
| 专利号 | JP2661307B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To improve a semiconductor laser in luminous efficiency by a method wherein a semiconductor laser is formed in such a structure that an Er doped InGaAsP active layer and an InGaAsP excitation layer are connected together in a resonant direction on an N-type InP substrate and an N-type InP clad layer and a P-type InP clad layer is formed on all the surface. CONSTITUTION:An N-type InP clad layer 2, an Er doped InGaAsP active layer 3, and an InP etching stop layer 14 are grown on an N-type InP substrate 1, the etching stop layer 14 and the active layer 3 are selectively etched using an SiO2 film 16 as a mask, an InGaAsP excitation layer 4 and an InP cover layer 15 are grown on the whole surface, only the cover layer 15 and the excitation layer 4 on the active layer 3 are etched, and a P-type InP clad layer 5 is grown on all the surface. Then, the active layer 3 is mesa-etches as wide as its width and so deep as to reach to the N-type InP clad layer 2, a P-type InP buried layer 7 and an N-type InP layer 8 are grown as buried, a P-type InP clad layer 5 and a P-type InGaAsP cap layer 6 are grown on all the surface, and electrodes 9 and 10 are provided to both the sides of the substrate The P-side electrode is built only on the upside of the excitation layer 4 and a semiconductor laser of this design is so structure that a current is made to flow only through the excitation layer 4. |
| 公开日期 | 1997-10-08 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79148]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 佐々木 達也,山崎 裕幸,水戸 郁夫,等. 半導体レーザ. JP2661307B2. 1997-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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