Photo semiconductor device
文献类型：专利
| 作者 | CHINEN YUKIO; KOBAYASHI KENJI |
| 发表日期 | 1985-06-19 |
| 专利号 | JP1985113487A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo semiconductor device |
| 英文摘要 | PURPOSE:To attain the positional adjustment of a luminous source of photo semiconductor to a lens with high accuracy by a method wherein the inner wall of a tapered through hole is coated with a material capable of realizing the state of high viscosity, and varying in viscosity with temperature and time. CONSTITUTION:The inner wall of the tapered through hole 5 is coated with a metal of low melting point and high viscosity into a film 8. On condition that the minimum thickness of the film whereby a spherical lens 4 can be held at the optimum position to a laser chip 2 is (t), when the inner wall of the through hole is coated in ring form at its region of the positional adjustment width for the lens with the metal having a low melting point and a high viscosity in such a manner that the film thickness becomes above (t), and the lens is pushed-in with an exclusive jig during the heating of this coat, the lens 4 can be placed at the optimum position. |
| 公开日期 | 1985-06-19 |
| 申请日期 | 1983-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79154]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | CHINEN YUKIO,KOBAYASHI KENJI. Photo semiconductor device. JP1985113487A. 1985-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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