Manufacture of semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA |
| 发表日期 | 1989-12-20 |
| 专利号 | JP1989315180A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an inside interference type semiconductor laser by a simple method by processing an active layer into the shape of a stripe along the crystal axis direction in order to bury this with a semiconductor having the large width of a forbidden band. CONSTITUTION:A projection part 16 is formed in the direction on an n-type InP substrate 11 having a (100) face as the surface and an SiO2 film as a mask. A first clad layer 12 and an active layer 13 are made to grow on the substrate 11 excepting the projection part by a first epitaxial growth, while a second clad layer 14 and a P-type InGaAsP contact layer 15 are made to grow in order allover the substrate 1 A stripe-shaped mask, the direction of the stripe is in the direction is formed on this epitaxial wafer so as to manufacture the reverse mesa-shaped stripe shape by etching. Subsequently, a p-type InP buried layer 17 and an n-type current block layer 18 are made to grown in order on both sides of the active layer 13 by the second liquid phase epitaxial growth. Thereby, an inside interference type semiconductor laser can be manufactured with a simple production process. |
| 公开日期 | 1989-12-20 |
| 申请日期 | 1988-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA. Manufacture of semiconductor laser. JP1989315180A. 1989-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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