Semiconductor laser device and method for producing the same
文献类型：专利
| 作者 | SUYAMA, TAKAHIRO; OHBAYASHI, KEN; MATSUMOTO, MITSUHIRO |
| 发表日期 | 2000-04-25 |
| 专利号 | US6055255 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for producing the same |
| 英文摘要 | A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer. |
| 公开日期 | 2000-04-25 |
| 申请日期 | 1997-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79163]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUYAMA, TAKAHIRO,OHBAYASHI, KEN,MATSUMOTO, MITSUHIRO. Semiconductor laser device and method for producing the same. US6055255. 2000-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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