Semiconductor light emitting element
文献类型：专利
| 作者 | SAKAI KAZUO; NISHIMURA KIMISUKE |
| 发表日期 | 1992-01-07 |
| 专利号 | JP1992002178A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To sufficiently confine carrier, to prevent generation of a crystal defect due to a distortion and to provide a light emitting element having high reliability and excellent light emitting efficiency by forming an active layer and a double heterostructure of a clad layer disposed at both sides of the active layer, and specifying the material composition and the thickness of the layer. CONSTITUTION:A semiconductor light emitting element has an active layer 5 made of group II-VI semiconductor containing CdxZn1-xS or CdxZn1-xS as main as ingredients and a clad layer 3 made of group II-VI semiconductor containing CdyZn1-yS or CdyZn1-yS as main ingredients. Here, the layer 7 and the layers 3, 7 have about 2% of lattice constant difference. However, since the thickness of the layer 5 is sufficiently thin, a double heterostructure is formed in a distortion quantum well structure, and even if a lattice mismatching occurs, no defect is generated in the active layer. That is, if the relationship between a difference x of Cd components of the layers 3, 7 and 5 and the thickness d(mum) of the layer 5 satisfies d, the defect of the layer 5 due to the lattice mismatching can be prevented. |
| 公开日期 | 1992-01-07 |
| 申请日期 | 1990-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,NISHIMURA KIMISUKE. Semiconductor light emitting element. JP1992002178A. 1992-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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