半導体レーザ
文献类型：专利
| 作者 | 浜田 弘喜; 庄野 昌幸 |
| 发表日期 | 1999-07-09 |
| 专利号 | JP2951053B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to oscillate laser rays of high power stable in a lateral mode by a method wherein a current injection part which is wide at its center and narrow on both end face sides is provided. CONSTITUTION:The crosswise center of a clad layer 5 is formed into a mesa shape throughout its lengthwise region, and a P-type GaInP contact layer 6 is laminated on the mesa in stripe to serve as a current path. An N-type GaAs block layer 7 and a P-type GaAs cap layer 8 are laminated in this order on the non-mesa region of the clad layer 5 and the contact layer 6. But, on the lengthwise center of the contact layer 6, a block layer 7 is not formed on a region which is formed diamond-shaped becoming gradually wider from its end toward its center, and a cap layer 8 is directly formed in lamination. By this constitution, the stripe concerned is divided into a current infection region and a current non-injection region. By this setup, a mode filtering phenomenon is induced in the stripe concerned. |
| 公开日期 | 1999-09-20 |
| 申请日期 | 1991-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 浜田 弘喜,庄野 昌幸. 半導体レーザ. JP2951053B2. 1999-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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