Semiconductor laser device
文献类型：专利
| 作者 | SASAI YOICHI; NAKAO ICHIRO |
| 发表日期 | 1986-02-15 |
| 专利号 | JP1986032589A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, the surface of an element thereof is flattened, in which leakage currents to the outside of a mesa section with an active layer are removed and which is manufactured easily, by forming an indentation to the mesa section consisting of an optical waveguide layer and the active layer while a p-n junction in a buried layer is positioned at the position of the indentation. CONSTITUTION:An n type InP clad layer 22, an n type InGaAsP optical waveguide layer 23, an InGaAsP active layer 24, a p type InP clad layer 25, a p type InGaAsP contact layer 26, a p type InP buried layer 27, an n type InP buried layer 28 and an SiO2 film 29 are formed onto an n type InP substrate 2 Indentations 32 are shaped to sections in the broken line of the mesa section of the active layer 24, and the p type InP buried layer 27 does not creep up to the upper section of an inverted mesa and the upper section of the inverted mesa is flattened. Consequently, the position of a p-n junction in the buried layer is formed at a mesa section with high accuracy. Accordingly, leakage currents to the p type InP buried layer 27 from the p type InP clad layer 25 are removed, thus improving luminous efficiency and lowering threshold currents. The p type InP buried layer 27 does not creep up to the upper section of the inverted mesa, thus flattening the surface of semiconductors, then reducing defectives on the mounting and assembly of a p side-down. |
| 公开日期 | 1986-02-15 |
| 申请日期 | 1984-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79178]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SASAI YOICHI,NAKAO ICHIRO. Semiconductor laser device. JP1986032589A. 1986-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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