Semiconductor laser device
文献类型：专利
| 作者 | NAITO HIROKI; SHIMIZU YUICHI |
| 发表日期 | 1992-12-24 |
| 专利号 | JP1992370993A |
| 著作权人 | 松下電子工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize a semiconductor laser having a low operating current value by providing an optical guide layer in contact with an active layer, and forming a current block layer having a lower refractive index than that of the clad layer in contact with the guide layer. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type Ga0.45Al0.55As clad layer 3, a Ga0.9Al0.1As active layer 4, a p-type Ga0.7Al0.3As optical guide layer, and an n-type Ga0.42Al0.58As current block layer 6 are sequentially grown on an n-type GaAs substrate A stripelike window is formed in the current block layer, and a p-type Ga0.45Al0.55As clad layer 7, a p-type GaAs contact layer 8 are formed. Since an optical guide layer having low AlAs mixed crystal ratio is grown in a current flowing stripe 9, an excellent growth is performed. Since a loss of a waveguide is small, an operating current value can be reduced due to the relationship between the current and an optical output. |
| 公开日期 | 1992-12-24 |
| 申请日期 | 1991-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電子工業株式会社 |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,SHIMIZU YUICHI. Semiconductor laser device. JP1992370993A. 1992-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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