Semiconductor light emitting element
文献类型：专利
| 作者 | SASAKI TATSUYA; KITAMURA MITSUHIRO; TAKANO SHINJI |
| 发表日期 | 1990-02-05 |
| 专利号 | JP1990033990A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To prevent an impurity from diffusing from a clad layer to an active layer for obtaining a semiconductor light emitting element of remarkably improved characteristics by forming a spacer layer of different composition from both the active layer and the clad layer between said layers. CONSTITUTION:An Si-doped n-type buffer layer 2, a quantum well active layer 3 comprising an undoped InGaAs barrier layer and an undoped InGaAs quantum well layer, and a Zn-doped p-type InP clad layer 5 are stacked in this order on an n-type InP substrate In stacking an undoped InGaAsP diffusion prevention layer 4 of different composition from both the clad layer 5 and the active layer 3 is formed between the layers 5 and 3. This prevents an impurity from diffusing from the clad layer 5 to the active layer 3 for obtaining a semiconductor light emitting element of remarkably improved characteristics. |
| 公开日期 | 1990-02-05 |
| 申请日期 | 1988-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79192]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAKI TATSUYA,KITAMURA MITSUHIRO,TAKANO SHINJI. Semiconductor light emitting element. JP1990033990A. 1990-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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