半導体レ-ザ素子
文献类型：专利
| 作者 | 清水 明 |
| 发表日期 | 1995-03-29 |
| 专利号 | JP1995028094B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ素子 |
| 英文摘要 | PURPOSE:To obtain a variable wavelength semiconductor laser element characterized by a broad variable wavelength range and highly efficient operation, by providing a plurality of light emitting layers in the same light guide structure, and making the optical gain of a light emitting layer having a longer wavelength positive, in any oscillating wavelength of other light emitting layers having shorter wavelength, when a current close to an oscillating threshold value is made to flow through this element. CONSTITUTION:On an N-type GaAs substrate 1, N-type GaAs of a buffer layer 2 and N-type Al0.6Ga0.4As of a clad layer 5 are grown respectively. Then, a barrier layer 92, a second light emitting layer 12, a barrier layer 11, a first light emitting layer 10 and a barrier layer 91 are grown on the clad layer 5 sequentially. Then P-type Al0.6Ga0.4As as a clad layer 3 and P-type GaAs as a cap layer 6 are grown on the barrier 9 Then, parts of the cap layer 6 and the clad layer 3 are etched close to the barrier layer 9 After a stripe shaped protruding region is formed, the region is masked with a dielectric layer. An electrode 8 is evaporated so as to make contact with only the upper part of the cap layer 6, which is not etched. An electrode 7 is evaporated on the bottom surface of the substrate The laminated body is cleaved, and a semiconductor laser element having the laser resonating surface is formed. |
| 公开日期 | 1995-03-29 |
| 申请日期 | 1987-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79194]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 清水 明. 半導体レ-ザ素子. JP1995028094B2. 1995-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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