Semiconductor laser device
文献类型：专利
| 作者 | OKI YOSHIMASA |
| 发表日期 | 1987-07-18 |
| 专利号 | JP1987162385A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high-power light source having a single-peak distribution of intensity at the center of curvature, by arranging a plurality of distributed feedback laser resonators provided with a grid consisting of concentric arcs so as to orient the resonators toward the center of curvature of the grid. CONSTITUTION:An N-type InP buffer layer 2 is deposited on an N-type InP substrate A thin film of resist is provided and a grid consisting of concentric arcs with a radius of curvature of 2mm is drawn by an electronic beam at a cycle of 2,000Angstrom . After development, the substrate is etched to form a concentric arc grid 3 having a depth of about 500Angstrom . An N-type InGaAsP waveguide layer 4, an active layer 5, a P-type InP clad layer 6 and P type InGaAsP cap layer 7 are overlaid thereon so as to have predetermined energy gaps and thicknesses, respectively. This multilayer structure is subjected to photolithography and etching to form radial mesa stripes such that the center of the radial pattern coincide with the center of curvature of the grid. The mesa stripes are covered with P- and N-type InP 8. After a preselected electrode is provided, a sector-shaped mesa pattern is produced by photolithography and etching. When resonators are excited simultaneously, a single-peak output corresponding to approximately the total of all the resonators appears at the position where beams are converged. This is an effect convenient in practical use. |
| 公开日期 | 1987-07-18 |
| 申请日期 | 1986-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OKI YOSHIMASA. Semiconductor laser device. JP1987162385A. 1987-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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