半導体レーザ素子の製造方法
文献类型：专利
| 作者 | 細羽 弘之; 松本 晃弘; 松井 完益; 森本 泰司 |
| 发表日期 | 1994-11-24 |
| 专利号 | JP1994095589B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子の製造方法 |
| 英文摘要 | PURPOSE:To provide a high output without deteriorating light emitting characteristic by forming small width of a ridge in an end face vicinity region, a side groove at a resonator central region, and an active layer thin at the end face vicinity region and thick at the resonator central region. CONSTITUTION:A semiconductor laser element has a ridge 9 on a substrate 1, a V-shaped groove 11 at the center of the ridge 9, and a laminated layer structure above the ridge 9 such as a current blocking layer 2, clad layers 3, 5, an active layer 4, etc. The width W1 of the ridge 9 of a resonator central region is made larger than the width W2 of the ridge 9 of an end face vicinity region, and one or more side grooves 10 are formed at both side regions except the region of the central width W2 of the region of the width W1 of the ridge 9. The upper face of the laminated layer structure is flat, an active layer 4 is formed on the flat face, and the thickness of the active layer 4 of the end face vicinity region above the groove 10 is smaller than that of the active layer 4 of the resonator central region. Thus, a semiconductor laser element can respond to a request of a high output without deteriorating emitting light characteristic. |
| 公开日期 | 1994-11-24 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 細羽 弘之,松本 晃弘,松井 完益,等. 半導体レーザ素子の製造方法. JP1994095589B2. 1994-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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