Semiconductor light emitting device
文献类型：专利
| 作者 | NISHI HIROSHI |
| 发表日期 | 1984-01-10 |
| 专利号 | JP1984004193A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a light output waveform of high efficiency, low threshold, preferable linearity and high quality by arranging a semiconductor layer having a refractive index larger than a clad layer arranged selectively at least one of the first and second clad layers and the first hole drawn with a light emitting region in the active layers, and a semiconductor layer having a the second hole smaller than the first hole for drawing a current path on the clad layer between the previous semiconductor layer and the active layer. CONSTITUTION:A current path width S is specified by two current enclosure layers 9, and formed smaller than the light emitting width specified by two light enclosure layers 5. Accordingly, after the current passes the layer 9, the W, S and the thickness of the second clad layer 4 can be selected so that the current path width does not exceed the light emitting width W even if the width is slightly extended, thereby almost eliminating the reactive current component. Thus, even if the light emitting width S is reduced, the oscillating threshold current can be reduced, and the differentiated quantum efficiency can be increased. Accordingly, the area of the light emitting unit can be reduced. In this manner, moderating vibration in which speed characteristics can be suppressed, and preferable light output waveform can be obtained. |
| 公开日期 | 1984-01-10 |
| 申请日期 | 1982-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI. Semiconductor light emitting device. JP1984004193A. 1984-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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