Semiconductor light-emitting element and manufacture thereof
文献类型：专利
| 作者 | OONAKA SEIJI; SERIZAWA HIROMOTO |
| 发表日期 | 1986-01-13 |
| 专利号 | JP1986006889A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To form a light-emitting element, through which projecting beams having a small spread angle of beams are obtained, by forming the back of a substrate to a cylindrical lens shape. CONSTITUTION:The back of a P type InP substrate 11 is formed to a cylindrical lens shape. An InGaAsP active layer 12 having a band gap such as 0.95eV one (lambdag=3mum), an InGaAsP optical waveguide layer 13 having the band gap such as 2eV one (lambdag=0mum) and a layer 14, which consists of a semiconductor film such as an SiO2 film and a current injection region thereof is bored to a striped form, are shaped in the order. Electrodes 15, 16 composed of Au-Sn and Au-Zn are each formed. A diffraction grating for extracting projecting beams is formed to the optical waveguide 13, and primary diffracted beams are projected vertically in the direction vertical to the optical waveguide layer 13 when pitches are 3,900Angstrom long. Laser beams C are projected to the substrate side. Secondary diffracted beams contribute to laser oscillation on a distributed feedback type laser. |
| 公开日期 | 1986-01-13 |
| 申请日期 | 1984-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OONAKA SEIJI,SERIZAWA HIROMOTO. Semiconductor light-emitting element and manufacture thereof. JP1986006889A. 1986-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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