Optoelectronic devices
文献类型：专利
| 作者 | JOHN, HAIG, MARSH; ANN, CATRINA, BRYCE; BOCANG, QUI; ELCHURI, RAO; BERTRAND, THEYS; YVON, HEYMES |
| 发表日期 | 2003-08-27 |
| 专利号 | GB2385712A |
| 著作权人 | THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic devices |
| 英文摘要 | The device comprises an intermixed quantum well semiconductor structure in which dopant impurities and/or point defects are passivated by exposing the device to a hydrogen plasma. The passivation reduces free carrier optical absorption of the device. The invention may be applied to optoelectronic/photonic devices including lasers, waveguides, optical switches, mode expanders, convertors and convertors, optical amplifiers and optical switches. |
| 公开日期 | 2003-08-27 |
| 申请日期 | 2002-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW |
| 推荐引用方式 GB/T 7714 | JOHN, HAIG, MARSH,ANN, CATRINA, BRYCE,BOCANG, QUI,et al. Optoelectronic devices. GB2385712A. 2003-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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