Manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE MINORU; OKAJIMA MASASUE |
| 发表日期 | 1992-09-25 |
| 专利号 | JP1992269886A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a mixed crystal layer having low carrier concentration by forming a dielectric film having a partial opening on a double heterostructure and heat-treating a substrate directly under the film. CONSTITUTION:A double heterostructure in which a quantum well active layer 13 is interposed between InGaAlP clad layers 11 and 15, is formed on an n-type GaAs substrate 10. An SiO2 film 16 having a stripelike opening is formed on the structure. Then, the substrate 10 is heat-treated to form a mixed crystal directly under the film 16 of the layer 13. Then, the layer 13 is buried with a mixed crystal layer 19 having a lower refractive index and larger band gap than those of the layer 13 to form a refractive index waveguide structure. |
| 公开日期 | 1992-09-25 |
| 申请日期 | 1991-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79215]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | WATANABE MINORU,OKAJIMA MASASUE. Manufacture of semiconductor laser. JP1992269886A. 1992-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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