Manufacture of semiconductor device
文献类型：专利
| 作者 | CHICHIBU SHIGEHIDE; FURUYAMA HIDETO; MATSUMOTO KENJI |
| 发表日期 | 1990-07-23 |
| 专利号 | JP1990187038A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To suppress the spread of a pattern in a gate electrode and improve a high frequency specificity by laminating one after another semiconductor layers consisting of three layers which have different etching characteristics and conducting each selective etching. CONSTITUTION:An n-type InP layer 102 which acts as an operating layer, an n-type GaInAsP layer 13 which acts as an etching stopper layer, an n-type InP layer, and a GaInAsP layer 15 are allowed to perform epitaxial growths on an InP substrate 10 A photoresist layer 16a is formed on the above layer 15 by pattern-formation and the layer 15 is etched with mixed liquid of sulfuric acid and hydrogen peroxide. Further, the layer 14 is etched with hydrochloric acid by using a remained part of the layer 15 as a mask to form a trench. In such a case, the layer 14 is etched vertically and etching stops automatically as soon as its trench reaches the layer 13. After the layer 13 is etched so that its layer corresponds to an interval between source and drain regions, source and drain electrodes 17S and 17D are formed. After treating with heat, a gate electrode 18 is formed by using a positive photoresist 16c. |
| 公开日期 | 1990-07-23 |
| 申请日期 | 1989-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | CHICHIBU SHIGEHIDE,FURUYAMA HIDETO,MATSUMOTO KENJI. Manufacture of semiconductor device. JP1990187038A. 1990-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。