Semiconductor laser
文献类型：专利
| 作者 | TAMURA HIDEO; SUZUKI KAZUO; MATSUMOTO KENJI; KURIHARA HARUKI |
| 发表日期 | 1985-10-14 |
| 专利号 | JP1985202978A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To suppress mode hopping noise and reflecting noise till a high optical output and to stabilize transversal mode, by providing with optical guide means and current stricture means putting the active layer between them, and by injecting current into only a portion of an optical guide region. CONSTITUTION:After an N type GaAs current blocking layer 64 is formed on a P type GaAs substrate 62, a photo resist 66 is formed thereon. By reactive ion- etching using the photo resist 66 as a mask, a groove 68 is formed. After the resist 66 is removed, a P type AlGaAs clad layer 70, an AlGaAs active layer 72 and an N type AlGaAs clad layer 74 are formed with liquid phase crystal growing. After an optical guide region 75 is formed by etching the both sides of the clad layer 74, an N type GaAs optical-absorbing and contacting layer 76 is crystal-grown and electrodes 78, 80 are mounted on the top and bottom faces. |
| 公开日期 | 1985-10-14 |
| 申请日期 | 1984-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79244]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,SUZUKI KAZUO,MATSUMOTO KENJI,et al. Semiconductor laser. JP1985202978A. 1985-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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