中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser element and manufacture thereof

文献类型:专利

作者UEJIMA KENICHI
发表日期1989-10-25
专利号JP1989268081A
著作权人HITACHI LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser element and manufacture thereof
英文摘要PURPOSE:To obtain a semiconductor laser element having two or more light emitting parts whose characteristics are uniform, by providing trapezoidal protruding parts on the main surface of a substrate, and providing two or more channel for constituting resonators on said protruding parts. CONSTITUTION:Two or more channels 1 for constituting resonators 12 which emit laser light are provided on the main surface of a substrate 3 in a semiconductor laser element 13. Trapezoidal protruding parts 2 are provided on the substrate 3 in the laser element 13. Said channels 1 are provided on the protruding parts 2. For example, the trapezoidal protruding parts 2 are formed on a P-type GaAs substrate 3. N-type GaAs current narrowing layers are formed thereon. The two channels 1 reaching the substrate 3 are provided. A P-type GaAs clad layer 5, a GaAlAs active layer 6, an N-type GaAlAs clad layer 7 and an N-type GaAs cap layer 8 are laminated on the current narrowing layers 4 and the substrate 3 which is exposed by the channels An isolating groove 9 reaching the substrate 3 is provided between the two channels
公开日期1989-10-25
申请日期1988-04-20
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/79248]  
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
UEJIMA KENICHI. Semiconductor laser element and manufacture thereof. JP1989268081A. 1989-10-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

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