Semiconductor laser element and manufacture thereof
文献类型:专利
作者 | UEJIMA KENICHI |
发表日期 | 1989-10-25 |
专利号 | JP1989268081A |
著作权人 | HITACHI LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element and manufacture thereof |
英文摘要 | PURPOSE:To obtain a semiconductor laser element having two or more light emitting parts whose characteristics are uniform, by providing trapezoidal protruding parts on the main surface of a substrate, and providing two or more channel for constituting resonators on said protruding parts. CONSTITUTION:Two or more channels 1 for constituting resonators 12 which emit laser light are provided on the main surface of a substrate 3 in a semiconductor laser element 13. Trapezoidal protruding parts 2 are provided on the substrate 3 in the laser element 13. Said channels 1 are provided on the protruding parts 2. For example, the trapezoidal protruding parts 2 are formed on a P-type GaAs substrate 3. N-type GaAs current narrowing layers are formed thereon. The two channels 1 reaching the substrate 3 are provided. A P-type GaAs clad layer 5, a GaAlAs active layer 6, an N-type GaAlAs clad layer 7 and an N-type GaAs cap layer 8 are laminated on the current narrowing layers 4 and the substrate 3 which is exposed by the channels An isolating groove 9 reaching the substrate 3 is provided between the two channels |
公开日期 | 1989-10-25 |
申请日期 | 1988-04-20 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/79248] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | UEJIMA KENICHI. Semiconductor laser element and manufacture thereof. JP1989268081A. 1989-10-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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