Distributed feedback semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1989-09-29 |
| 专利号 | JP1989244688A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the diffusion of carrier injected in an active layer, and enable the confinement of the carrier, by forming a sufficiently large difference of forbidden bandwidth between the active layer and a clad layer. CONSTITUTION:On an n-InP substrate 1, the following layers are continuously subjected to liquid growth; a 4mum thick n-InGaAsP optical guide layer 2, an n-InP clad layer 3, a 3mum thick InGaAsP active layer 4, a P-InP clad layers 5, and a 1mum P-InGaAsP cap layer 6. The typical thickness of each layer is as follows; the optical guide layer 2 is 0.08mum, the n-clad layer 3 is 0.05mum, the active layer 4 is 0.1mum, the P-clad layer 5 is 5mum and the cap layer 6 is 3mum. Finally a P-side electrode 8 and an N-side electrode 9 are formed. |
| 公开日期 | 1989-09-29 |
| 申请日期 | 1988-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79251]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. Distributed feedback semiconductor laser. JP1989244688A. 1989-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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