Semiconductor laser device
文献类型：专利
| 作者 | NAITO, YUMI; OKADA, SATORU; FUJIMOTO, TSUYOSHI |
| 发表日期 | 2001-09-04 |
| 专利号 | US6285699 |
| 著作权人 | MITSUI CHEMICALS INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1-xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized. |
| 公开日期 | 2001-09-04 |
| 申请日期 | 1998-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79266]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS INC. |
| 推荐引用方式 GB/T 7714 | NAITO, YUMI,OKADA, SATORU,FUJIMOTO, TSUYOSHI. Semiconductor laser device. US6285699. 2001-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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