中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser

文献类型:专利

作者ODAKAWA TETSUSHI; WAKAO KIYOHIDE; YAMAGOSHI SHIGENOBU
发表日期1991-10-16
专利号JP1991232290A
著作权人FUJITSU LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser
英文摘要PURPOSE:To enable a semiconductor laser to be controlled in oscillation wavelength in a wide range without providing a grating externally by a method wherein distribution reflectors different from each other in Bragg wavelength are selected. CONSTITUTION:When no current is made to flow through an optical switch 2, light emitted from an active layer 4 is made to advance from a waveguide 16 on the active layer 14 side to a distribution reflector 1a passing through a waveguide 17a on a reflector side, and when a current is made to flow through the optical switch 2, light is totally reflected by the optical switch 2, the optical path is switched to a waveguide 17b on a reflector side, and the light is guided to a distribution reflector 1b. By switching an optical path, oscillation laser light can be roughly set in wavelength. A fine adjustment of laser light in wavelength can be made through such a way that a current flowing through an oscillated distribution reflector and another current flowing through a phase control region 3 are set different from each other in intensity.
公开日期1991-10-16
申请日期1990-02-08
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/79268]  
专题半导体激光器专利数据库
作者单位FUJITSU LTD
推荐引用方式
GB/T 7714
ODAKAWA TETSUSHI,WAKAO KIYOHIDE,YAMAGOSHI SHIGENOBU. Semiconductor laser. JP1991232290A. 1991-10-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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