Semiconductor laser
文献类型:专利
作者 | ODAKAWA TETSUSHI; WAKAO KIYOHIDE; YAMAGOSHI SHIGENOBU |
发表日期 | 1991-10-16 |
专利号 | JP1991232290A |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To enable a semiconductor laser to be controlled in oscillation wavelength in a wide range without providing a grating externally by a method wherein distribution reflectors different from each other in Bragg wavelength are selected. CONSTITUTION:When no current is made to flow through an optical switch 2, light emitted from an active layer 4 is made to advance from a waveguide 16 on the active layer 14 side to a distribution reflector 1a passing through a waveguide 17a on a reflector side, and when a current is made to flow through the optical switch 2, light is totally reflected by the optical switch 2, the optical path is switched to a waveguide 17b on a reflector side, and the light is guided to a distribution reflector 1b. By switching an optical path, oscillation laser light can be roughly set in wavelength. A fine adjustment of laser light in wavelength can be made through such a way that a current flowing through an oscillated distribution reflector and another current flowing through a phase control region 3 are set different from each other in intensity. |
公开日期 | 1991-10-16 |
申请日期 | 1990-02-08 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/79268] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | ODAKAWA TETSUSHI,WAKAO KIYOHIDE,YAMAGOSHI SHIGENOBU. Semiconductor laser. JP1991232290A. 1991-10-16. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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