Semiconductor laser device
文献类型：专利
| 作者 | KOUNO TOSHIHIRO; OOTOSHI SOU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU |
| 发表日期 | 1984-08-21 |
| 专利号 | JP1984145589A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive to reduce reactive currents, and to lower a threshold current value and lengthen life by making the width of a light guide layer larger than that of an active layer, forming a current block layer to the active layer and controlling the position of the interface between the active layer and the current block layer. CONSTITUTION:A light guide layer 3 exists up to laser-beam reflecting end surfaces, and the end surfaces of an active layer 4 are positioned on the insides more than the reflecting end surfaces. A mesa stripe is formed in the direction that the shape of a section takes a trapezoid through mesa etching, and only a P-Ga0.8Al0.2As cap layer 6, a P-Ga0.55Al0.45As clad layer 5 and the active layer 4 in the vicinity of the end surfaces are removed through etching. The outside of the mesa stripe is buried through a buried growth method. The side surfaces of the active layer 4 are buried with current block layers (P-Ga0.55Al0.45As layers) 7 even in a section in the direction of a laser optical axis at that time. Accordingly, threshold currents are reduced, and a visible semiconductor laser device of the maximum optical output of 1W is obtained. Since currents flowing near the laser-beam reflecting end surfaces can also be lowered, the damage of the end surfaces due to heat is reduced, and reliability is improved, too. |
| 公开日期 | 1984-08-21 |
| 申请日期 | 1983-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79282]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOUNO TOSHIHIRO,OOTOSHI SOU,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1984145589A. 1984-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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