面発光型半導体レーザ
文献类型：专利
| 作者 | 森 克己; 浅賀 達也; 岩野 英明 |
| 发表日期 | 2003-09-05 |
| 专利号 | JP3467593B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザ |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold value current and to reduce generation of heat by forming a buried layer around a columnar semiconductor layer as a II-VI compound semiconductor epitaxial layer having a high resistance, and forming an active layer in a multiple quantum well structure. CONSTITUTION:An n-type GaAs buffer 103 is formed on an n-type GaAs substrate 102, and a distributed reflection type multilayer film mirror 104 made of an n-type Al0.7Ga0.3As layer and an n-type Al0.1Ga0.9As layer is formed. An n-type Al0.4Ga0.6As clad layer 105, an active layer 106 having a multiple quantum well structure, a p-type Al0.4Ga0.6As clad layer 107, and a p-type Al0.1 Ga0.9As contact layer 108 are sequentially epitaxially grown. After the growth, an SiO2 layer 111 is formed on the surface, the layer 107 is etched to the midway except a columnar light emitting unit covered with a hard baking resist 113. After the resist 113 is removed, a ZnS0.06Se0.94 layer 109 having a resistance of 1GOMEGA or more is buried and grown. Further, an SiO2/alpha-Si dielectric multilayer film 111 is formed on the surface. |
| 公开日期 | 2003-11-17 |
| 申请日期 | 1991-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 森 克己,浅賀 達也,岩野 英明. 面発光型半導体レーザ. JP3467593B2. 2003-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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