Manufacture of semiconductor laser element
文献类型：专利
| 作者 | MURATA KAZUHISA; YAMAMOTO SABUROU; HAYASHI HIROSHI; TAKENAKA TAKUO |
| 发表日期 | 1982-12-25 |
| 专利号 | JP1982211290A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To form a current path groove with minute stripe width positively through etching, and to obtain the fundamental-mode oscillating laser element having the log life of operation in excellent reproducibility by forming an N type GaAs layer having a current stopping function to a P type GaAs substrate through a gaseous-phase growth method, a molecular-beam epitaxial growth method, etc. CONSTITUTION:An N type GaAs layer 11, carrier concentration thereof is approximately 2X10cm, is grown onto a P type GaAs substrate 10 in gaseous phase in approximately 0.8mum thickness through a CVD method and used as a current stopping region, and a striped groove, depth thereof is 0mum, which intrudes into the substrate 10 and width thereof is 3.5-4.0mum, is shaped at the central section of the surface. A P type GaAlAs clad layer 12, an N type or P type CaAlAs active layer 13, an N type GaAlAs clad layer 14 and an N type GaAs cap layer 15 are grown continuously onto the whole surface containing the groove, and an N side electrode 17 made of AuGe-Ni-Au is formed onto the layer 15 and a P side electrode 16 onto the back of the substrate 10 respectively. The whole is cloven, and a resonator is formed by the cleavage plane. |
| 公开日期 | 1982-12-25 |
| 申请日期 | 1981-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79290]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MURATA KAZUHISA,YAMAMOTO SABUROU,HAYASHI HIROSHI,et al. Manufacture of semiconductor laser element. JP1982211290A. 1982-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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