Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | HIRANO RIYOUICHI; OOMURA ETSUJI; HIGUCHI HIDEYO; SAKAKIBARA YASUSHI; NAMISAKI HIROBUMI; SUZAKI WATARU |
| 发表日期 | 1984-07-06 |
| 专利号 | JP1984117288A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent deterioration in electric characteristics of a device even at a high temperature during the current conduction for a long time, by the constitution, wherein different conducting type impurities are diffused in a region forming a crystal interface, and the position of a P-N junction is moved from the interface to the inside or to the outside. CONSTITUTION:The carrier concentration of P-type impurities in a P-InP layer 4 is denoted as Np, and the carrier concentration of N-type impurities in an N-InP layer 1, which is a substrate is denoted as Nn. In this case the relationship Np>Nn is established. For example, Zn, whose diffusion is easy, is selected as the P type impurities. An InGaAsP active layer is P-type. Then, the position of the P-N junction, which is exposed to the initial atmosphere, A, B, and C, and D, E, and F is moved to the position A', B', and C', and D', E', and F' in the N-InP layer In this constitution, the exposed P-N junction interface, which becomes the cause of deterioration at a high temperature, is eliminated. As a result, a current can be concentrated in the active region 2a. |
| 公开日期 | 1984-07-06 |
| 申请日期 | 1982-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79293]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRANO RIYOUICHI,OOMURA ETSUJI,HIGUCHI HIDEYO,et al. Manufacture of semiconductor light emitting device. JP1984117288A. 1984-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。