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文献类型：专利
| 作者 | ODAGIRI JUICHI; KOBAYASHI ISAO |
| 发表日期 | 1992-04-15 |
| 专利号 | JP1992022034B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the yield of the titled device by etching of the electrode close to the active layer to the location before the etched layer by a method wherein semiconductor etching stop layers of the same conductivity type and different material compositions are laminated on the clad layer immediately on the active layer. CONSTITUTION:The p-InP clad layer 11, InGaAsP active layer 12, and p-InP clad layer 13 are laminated on an n-InP substrate 10, and the first and second grooves 14 and 15 are formed by normal photolithography. Next, the first current block layer 16 of p-InP and the second current block layer 17 of n-InP are successively formed. At this time, layers 16 and 17 are not grown on a mesa stripe 18, the grooves 14 and 15 being completely filled after growth of the layer 17, and the periphery on the stripe 18 being then formed into a flat recess. Then, the p-InGaAsP etching stop layer 19 is formed, and the yield of the title device is improved by etching to the location before the layer 19, the third groove 30 that splits the P type electrode 22 close to the active layer 12 into two or more in the direction of the resonator axis. |
| 公开日期 | 1992-04-15 |
| 申请日期 | 1983-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79296]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ODAGIRI JUICHI,KOBAYASHI ISAO. -. JP1992022034B2. 1992-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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