Semiconductor laser element
文献类型：专利
| 作者 | YOSHIDA ICHIRO |
| 发表日期 | 1991-09-12 |
| 专利号 | JP1991209790A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To realize a semiconductor laser element which is excellent in temperature characteristics and high in reliability by forming the clad layer farther from the substrate of this element of AlGaInP having a specific thickness and die-boding a heat sink to the electrode farther from the substrate through a plated Au layer having a specific thickness. CONSTITUTION:An n-type substrate side clad layer 3, thin active layer 4 having a refractive index higher than that of the layer 3, and an n-type top-side clad layer 5 having a refractive index lower than that of the layer 4 are successively formed on the upper surface of an n-type substrate 2 equipped with an n-type electrode 1 on its rear surface. On the upper surface of the layer 5, an n-type block layer 10 which is partially removed in the form of a stripe along the length direction of a laser oscillator so as to expose the top-side clad layer 5 through the stripe-like removed part is formed. Of the clad layers 3 and 5 formed on both sides of the active layer 4, the layer 5 which is farther from the substrate 2 is formed of AIGaInP, with the thickness at the thickest part being 0.7-6mum, and a heat sink is die-bonded to the electrode which is farther from the substrate through a plated Au layer having a thickness of 5-30mum. |
| 公开日期 | 1991-09-12 |
| 申请日期 | 1990-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | YOSHIDA ICHIRO. Semiconductor laser element. JP1991209790A. 1991-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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