Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | MITO IKUO |
| 发表日期 | 1985-12-07 |
| 专利号 | JP1985247985A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain characteristics at an excellent single axial mode having superior reproducibility by burying a diffraction grating formed to an optical waveguide by an InGaAsP deformation preventive layer having a composition of a not less than 1mum luminous wavelength. CONSTITUTION:An N type InP buffer layer 2, a non-doped InGaAsP active layer 3 and a P type InGaAsP optical waveguide 4 are formed onto an N type InP substrate 1 through liquid-phase epitaxial growth in succession. A photo-resist film is applied, subjected to two-beam interference-exposure, and dried and etched to shape a diffraction grating 100, and a P type InGaAsP deformation preventive layer 5 and a P type InP clad layer 6 are laminated. Grooves 51, 52 are formed on both sides of a mesa stripe 50, a P type InP current blocking layer 7, an N type InP current confinement layer 8, a P type InP buried layer 9 and a P type InGaAsP contact layer 10 are shaped in succession, and electrodes 31, 32 are formed. |
| 公开日期 | 1985-12-07 |
| 申请日期 | 1984-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | MITO IKUO. Distributed feedback type semiconductor laser. JP1985247985A. 1985-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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