Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; TAKAMORI TAKESHI; NAKAJIMA HISAO |
| 发表日期 | 1987-06-18 |
| 专利号 | JP1987134986A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a multiple quantum well (MQW) refractive index wave AlGaAs semiconductor laser in simple manufacturing steps without using Zn diffusing step by diffusing in a lower optical guide except a portion etched in a stripe of an Si layer, and damaging the right and left multiplex quantum well structures of the optical guide to become in a disorder state to form a current narrowing layer. CONSTITUTION:An N-type GaAs suffer layer 2, an N-type AlxGa1-xAs/GaAs MQW buffer layer 3, an N-type AlxGa1-xAs clad layer 4, an N-type AlyGa1-yAs optical guide layers 5, an N-type AlzGa1-zAs/GaAs MQW active layer 6, a P-type AlyGa1-yAs optical guide layer 7, a P-type AlwGa1-wAs/GaAs MQW optical guide layer 8, and a P-type GaAs cap layer 9 are sequentially laminated on a first molecular beam epitaxially grown N-type GaAs (100) substrate Thereafter, an Si layer 10 is deposited at low temperature, and an As-coated layer 11 is formed on the layer 10. The layers 10 and 11 are removed in a strip shape, and heat treated while applying As pressure. Further, a P-type AlxGa1-xAs clad layer 12 and a P-type GaAs contact layer 13 are laminated by second molecular beam epitaxially growing method. The shaded region of MQW of the layer 8 is disordered by the second growth, and the shaded region becomes N-type and a current narrowing layer by diffusing Si. |
| 公开日期 | 1987-06-18 |
| 申请日期 | 1985-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79317]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,TAKAMORI TAKESHI,NAKAJIMA HISAO. Manufacture of semiconductor laser. JP1987134986A. 1987-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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