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文献类型：专利
| 作者 | IMAI HAJIME; KUSUKI TOSHIHIRO; ISHIKAWA HIROSHI |
| 发表日期 | 1989-12-19 |
| 专利号 | JP1989059752B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the threshold current and to stabilize the mode for the subject semiconductor light-emitting device by a method wherein a groove is provided on an InP substrate, and an InGaAs active layer is buried in the groove. CONSTITUTION:A groove is formed by performing an etching on a P-InP current blocking layer 12 and an N-InP semiconductor substrate 1 After the groove has been formed, an N-InP clad and current blocking layer 13 are formed. And the InGaAsP active layer 14 is then formed. This active layer 14 has both ends coming into contact with the surface of the InP substrate in the groove, and has the width which can be formed in proportion to the thickness of the clad layer 13. The active layer 14 formed in the groove functions when a current is applied, but the area outside the groove does not function, because no current is applied there. Through these procedures, as the width of the active layer 14 can be directly formed in proportion to the groove width provided on the substrate 11, an active layer of a very fine width, with which single mode oscillation can be performed, can be formed with an excellent reproducibility. |
| 公开日期 | 1989-12-19 |
| 申请日期 | 1980-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79318]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME,KUSUKI TOSHIHIRO,ISHIKAWA HIROSHI. -. JP1989059752B2. 1989-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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