Bistable semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1989-08-22 |
| 专利号 | JP1989208887A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bistable semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the size of an element by providing a laser light reflecting layer of a structure in which two types of semiconductors having different refractive indices are alternately laminated on an upper clad layer or under a lower clad layer, and employing a quantum well structure. CONSTITUTION:The wavelength of the gain peak of the forbidden band width E of a multiplex quantum well layer 5 substantially coincides with that of a semiconductor multilayer film 3 in high reflection, a voltage is applied between a P-type electrode 10 and an n-type electrode 11 to implant carrier to the layer 5, thereby emitting a light of the wavelength of substantially the gain peak. In this case, since an oscillation wavelength is displaced to a long wavelength side, an absorption in high multiplex quantum well refractive index is small. When a reverse voltage is applied between the P-type electrode and the n-type electrode, the absorption peak wavelength due to the exciton of the multiplex quantum well high refractive index layer formed of the film 2 is displaced to a long wavelength side, the absorption of a laser oscillation light is increased, and a bistable operation occurs by the saturable absorption of the exciton. Both a laser light reflecting layer containing the absorption layer and a laser light reflecting mirror are provided thereby to eliminate an absorption region parallel to the layer direction, thereby reducing the element size of a bistable semiconductor laser. |
| 公开日期 | 1989-08-22 |
| 申请日期 | 1988-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79322]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Bistable semiconductor laser. JP1989208887A. 1989-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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