Semiconductor device
文献类型：专利
| 作者 | SUZUKI MARIKO; SUGAWARA HIDETO; ISHIKAWA MASAYUKI; HATAGOSHI GENICHI |
| 发表日期 | 1992-11-18 |
| 专利号 | JP1992330786A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To provide a semiconductor device in which an element characteristic such as a light introducing efficiency, etc., is improved. CONSTITUTION:A semiconductor device comprising an n-type GaAs substrate 1 having a surface azimuth in plane (100) and a side of a main surface inclined at 15 degrees from a center in a direction in plane (011), an n-type clad layer 2, an active layer 3 and a p-type clad layer 5 sequentially formed on the substrate 1, a p-type electrode 7 formed on a region disposed at a center on the substrate 1 on the layer 4, and an n-type electrode 8 provided on a rear surface of the substrate |
| 公开日期 | 1992-11-18 |
| 申请日期 | 1991-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SUZUKI MARIKO,SUGAWARA HIDETO,ISHIKAWA MASAYUKI,et al. Semiconductor device. JP1992330786A. 1992-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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