Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO; MIHASHI YUTAKA |
| 发表日期 | 1989-08-14 |
| 专利号 | JP1989201979A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To achieve a low threshold value by providing a pair of second ridge regions closely so that a first ridge region is held and by controlling making a groove wherein the gap between the groove bottom and active layer is surrounded by both ridges into V groove. CONSTITUTION:An N-type GaAs clad layer 2a, an AlGaAs active layer 3a, a P-type AlGaAs clad layer 4a, and a P-type GaAs layer 5 are allowed to grow on an n-type GaAs (100) substrate 1 and then an SiN film coated. Then, SiN films 13a and 13b of a specified region 3 are left and the other SiN films are removed. Then, a P-type GaAs layer 5 is removed within a liquid of NH4 OH:H2O2=1:25 and the AlGaAs clad layer 4a is etched where H2SO4:H2O2:H2O is equal to 3:1: Then, after removing the projecting part of the central SiN film 13a with hydrofluoric acid etching liquid, a current block layer 24 consisting of an n-type AlGaAs layer 21, a P-type AlGaAs layer 22, and an n-type GaAs layer 23 is embedded. Then, after removing an SiN film 13a with hydrofluoric acid etching liquid, a P-type GaAs contact layer 25 is allowed to grow. It allows the gap between the groove bottom and the active layer to be precisely controlled and a desired characteristics to be achieved with improved reproducibility. |
| 公开日期 | 1989-08-14 |
| 申请日期 | 1988-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,MIHASHI YUTAKA. Semiconductor laser. JP1989201979A. 1989-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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