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文献类型：专利
| 作者 | KAWADA HATSUMI |
| 发表日期 | 1990-02-15 |
| 专利号 | JP1990007196B2 |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To equalize characteristics by forming an optical guide layer itself to a striped shape and controlling a semiconductor clad layer having a conduction type reverse to a substrate at an epitaxial growth rate in order to bury the optical guide layer into the clad layer. CONSTITUTION:An N-type AlxGa1-xAs clad layer 2 and an un-doped AlyGa1-yAs active layer 3 are grown on a substrate 1, and a P-type AlzGa1-zAs clad layer 41 is grown. A P-type AlaGa1-aAs optical guide layer 6 is grown, a protective layer 10 is grown, and a laminated pattern 11 is shaped through patterning. A P-type AlzGa1-zAs clad layer 42 is grown, a current constriction layer 5 is formed onto the layer 42, a mask is applied to a wafer, and a recessed groove reaching the laminated pattern 11 is shaped through etching. A protective layer 10 is removed, a P-type AlzGa1-zAs clad layer 43 is grown, a striped optical guide layer 6 is buried, a concrete layer 8 is grown, and metallic electrodes 9, 12 are evaporated. The relationship of mixed crystal coefficients is selected so as to hold y>=0, x>y, z>y, y |
| 公开日期 | 1990-02-15 |
| 申请日期 | 1985-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79330]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI. -. JP1990007196B2. 1990-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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