Manufacture of semiconductor device
文献类型：专利
| 作者 | ITOU MICHIHARU; YOSHIKAWA MITSUO; HAMASHIMA SHIGEKI; UEDA TOMOSHI |
| 发表日期 | 1982-11-19 |
| 专利号 | JP1982188829A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent the evaporation of a component, which is easily evaporated, from a crystal layer grown in epitaxial form by forming a semiconductor crystal onto a semiconductor substrate, contacting a liquid reservoir receiving the liquid phase of boron oxide with the crystal and coating the crystal with boron oxide. CONSTITUTION:A liquid reservoir 23 receiving the liquid phase 22 of cadmium telluride mercury and the liquid reservoir 25 receiving the liquid phase 24 of boron oxide are formed to a sliding member 21, the substrate 27 in cadmium telluride is buried into a supporting base 26, these are inserted into a reaction pipe, and heated, and the insides of the liquid reservoirs 23, 25 are changed into liquid phases. The sliding member 21 is moved, the liquid reservoir 23 is settled onto the cadmium telluride substrate 27, the crystal layer of cadmium telluride mercury is grown onto the substrate 27 in epitaxial form, the sliding member 21 is further moved, the liquid reservoir 25 is settled onto the substrate 27, and the crystal layer of cadmium telluride mercury is coated with the crystal of boron oxide. |
| 公开日期 | 1982-11-19 |
| 申请日期 | 1981-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ITOU MICHIHARU,YOSHIKAWA MITSUO,HAMASHIMA SHIGEKI,et al. Manufacture of semiconductor device. JP1982188829A. 1982-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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