半導体レーザ装置
文献类型：专利
| 作者 | 河西 秀典; 林 寛; 矢野 盛規; 森本 泰司; 山口 雅広 |
| 发表日期 | 1996-09-05 |
| 专利号 | JP2558767B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To obtain a highly reliable laminated structure even in the state of a high output power, by forming the laminated structure having a Ga1-yAlyAs layer having a stripe like opening, a current passage having a width that is narrower than that of the opening and provided in the opening, and a Ga1-zAlzAs layer. CONSTITUTION:An n-type Ga0.58Al0.42As layer 19 and an undopped GaAs etchback layer 20 are caused to grow on a substrate 11 and with the exception of only the width part W3 of 7mum in the layer 19, all of them are removed. Then, an n-type GaAs current blocking layer 12a is caused to grow and a V-shaped groove 1 is formed in order to make up a laser stripe. The V-groove 1 is formed so that it may reach the substrate 11 and an electric passage is opened. Further, a p-type Ga0.58Al0.42As clad layer 13, a p-type or an n-type Ga0.86Al0.14As active layer 14, an n-type Ga0.58Al0.42 As clad layer 15, and an n-type GaAs contact layer 16 are caused to grow. Subsequently, p-side and n-side electrodes 21 and 22 are provided. After carrying out an alloy treatment, cleavage is performed to make up a laser resonator. The current passage having a width narrower than that of a light emitting region is formed and as a result, optical absorption at a current bottleneck layer is decreased and higher order beam mode oscillations are suppressed by the above current passage. |
| 公开日期 | 1996-11-27 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 河西 秀典,林 寛,矢野 盛規,等. 半導体レーザ装置. JP2558767B2. 1996-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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