Semiconductor laser device
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1986-07-21 |
| 专利号 | JP1986160990A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device which can be produced with good mass productivity by a simple manufacturing process, has high output, and is controlled in oscillation mode, by a method wherein an impurity diffused region deep enough to exceed the active layer is provided at the part surrounding a stripe oscillation region, so that both ends of said oscillation region may not contact the laser resonance surface. CONSTITUTION:The first clad layer 2 the formation of a semiconductor layer on a semiconductor substrate 1, an active layer 3 of multilayer superlattice structure of the repeated lamination with a thickness of 100Angstrom or less on this clad layer 2, the second clad layer 4 the formation of a semiconductor layer on this active layer 3, and electrodes 7, 8 arranged on this clad layer 4 and the back of the substrate 1, respectively, are provided. Such a semiconductor laser device is provided with an impurity diffused region 5 deep enough to exceed the active layer 3 at the part surrounding a stripe oscillation region, so that both ends of the stripe oscillation region may not contact the laser resonance surface. This construction can yield the titled device which is controlled in oscillation lateral mode and is capable of high-output action. |
| 公开日期 | 1986-07-21 |
| 申请日期 | 1985-01-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79342]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Semiconductor laser device. JP1986160990A. 1986-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。