半導体レーザの製造方法
文献类型：专利
| 作者 | 藤井 宏明 |
| 发表日期 | 1994-05-02 |
| 专利号 | JP1994034427B2 |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To manufacture a high-quality and high-reliability semiconductor laser with good reproducibility and easily by a method wherein a selective growth operation of a blocking layer by utilizing a characteristic of an LPE method is introduced prior to an MOVPE growth operation and a substrate having two parallel grooves is used. CONSTITUTION:Two parallel grooves with (011) orientation are formed on a GaAs (100) substrate 6; this substrate is introduced into a liquid growth furnace; a current-blocking layer 4 composed of GaAs is formed. Then, the GaAs substrate having the blocking layer 4 is introduced into an MOVPE growth apparatus; a double heterostructure containing a buffer layer 7 is formed by using an MOVPE method. When the buffer layer 7 composed of GaAs is to be laminated on the substrate, the GaAs side which has been laminated on a mesa maintains the (111) B plane. Then, a clad layer 2 composed of AlGaInP or AlInP, an active layer 1 composed ot GaInP, a clad layer 3 composed of AlGaInP and a cap layer 5 composed of GaAs are laminated on the GaAs mesa having this (111) B plane on the side; a double heterostructure is formed. |
| 公开日期 | 1994-05-02 |
| 申请日期 | 1987-10-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79354]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | 藤井 宏明. 半導体レーザの製造方法. JP1994034427B2. 1994-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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