Vertical cavity apparatus with tunnel junction
文献类型：专利
| 作者 | BOUCART, JULIEN; CHANG-HASNAIN, CONSTANCE; JANSEN, MICHAEL; NABIEV, RASHIT; YUEN, WUPEN |
| 发表日期 | 2002-11-26 |
| 专利号 | US6487230 |
| 著作权人 | BANDWIDTH 9, INC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity apparatus with tunnel junction |
| 英文摘要 | A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors. |
| 公开日期 | 2002-11-26 |
| 申请日期 | 2000-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79369]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BANDWIDTH 9, INC |
| 推荐引用方式 GB/T 7714 | BOUCART, JULIEN,CHANG-HASNAIN, CONSTANCE,JANSEN, MICHAEL,et al. Vertical cavity apparatus with tunnel junction. US6487230. 2002-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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