半導体レーザの製造方法
文献类型：专利
| 作者 | 藤原 正敏 |
| 发表日期 | 1995-01-18 |
| 专利号 | JP1995003909B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To enable single wavelength oscillation determined by a diffraction grating by reversing the phase of interference fringe and by enabling the part without any gain to grow thus permitting the active layer gain to have periodic property in the longitudinal direction of a resonator after allowing a part of gain to grow by applying interference fringes, using the light excitation crystal growth method in forming an active region. CONSTITUTION:The first semiconductor layer 2 is formed on a InP substrate Then, a InGaAsP diffraction grating 3 which is not doped by Fe is formed by a light excitation growth method while applying an interference fringe to the semiconductor layer 2. After that, the phase of the above interference fringe is reversed by a phase shift plate 5 etc., and an InGaAsP layer 4 which is doped with Fe is formed so that it may bury the diffraction gratings 3 by the light excitation growth method. Furthermore, a p-type InP clad layer 6 and p-type InGaAsP contact layer 7 are formed on an InGaAsP layer 4 by the vapor growth method. Then, after forming an insulating film 8 on a contact layer 7, the insulating film 8 is partially removed in a stripe shape. And then, a P-side electrode 9 and N-side electrode 10 are formed to complete a laser. |
| 公开日期 | 1995-01-18 |
| 申请日期 | 1987-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79376]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 藤原 正敏. 半導体レーザの製造方法. JP1995003909B2. 1995-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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