Semiconductor laser diode
文献类型：专利
| 作者 | HORIE, HIDEYOSHI, C/O MITSUBISHI CHEMICAL CORP.; INOUE, YUICHI, C/O MITSUBISHI CHEMICAL CORP.; SHIMOYAMA, KENJI, C/O MITSUBISHI CHEMICAL CORP.; HOSOI, NOBUYUKI, C/O MITSUBISHI CHEMICAL CORP.; GOTO, HIDEKI, C/O MITSUBISHI CHEMICAL CORP. |
| 发表日期 | 1995-12-27 |
| 专利号 | EP0661784A3 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | The disclosure describes a semiconductor laser diode comprising at least a first clad layer (104), an active layer (101) and a second clad layer disposed in this order on the substrate (109), and a buried layer (106) for current blocking disposed at both sides in the cavity direction of the active layer, at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations. na > nc1 na > nc2 |
| 公开日期 | 1995-12-27 |
| 申请日期 | 1994-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79381]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI, C/O MITSUBISHI CHEMICAL CORP.,INOUE, YUICHI, C/O MITSUBISHI CHEMICAL CORP.,SHIMOYAMA, KENJI, C/O MITSUBISHI CHEMICAL CORP.,et al. Semiconductor laser diode. EP0661784A3. 1995-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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